溅射条件对FeSiB薄膜磁性及巨磁阻抗效应的影响  

Influence of Sputtering Conditions on Magnetic Properties and Giant Magneto-Impedance Effect in Amorphous FeSiB Films

作　　者：禹金强[1] 周勇[1] 蔡炳初[1] 余晋岳[1] 徐东[1] 

机构地区：[1]上海交通大学信息存储研究中心

出　　处：《功能材料》2000年第6期596-597,600,共3页Journal of Functional Materials

摘　　要：采用射频磁控溅射法,在不同溅射条件下制备了FeSiB薄膜。研究了溅射条件对薄膜应力、磁滞回线及巨磁阻抗效应的影响。结果表明:随着溅射氩气压强的增加,薄膜内应力从压应力变为张应力,磁滞回线的形状随溅射条件的不同也发生改变。对磁各向异性的变化作了分析和讨论,而面内横向单轴磁各向异性的重要性在巨磁阻抗效应的实验中充分得到了体现。Amorphous FeSiB thin films have been prepar ed by RF magnetron sputtering.The influence of deposition condition on internal stress,magnetization behavior and giant magneto-impedance effect is investigated.The experimental results show that the film stress tu rns from compressive to tensile with the increase of Ar gas pressure, and the magnetic anisotropy has a close relationship with the depositi on conditions.The importance of in-plane uniaxial transverse magnetic a nisotropy has been demonstrated for the giant magneto-impedance effect in our experiment.

关 键 词：磁各向异性 薄膜应力 FeSiB薄膜 巨磁阻抗效应 

分 类 号：TM27[一般工业技术—材料科学与工程] O484.43[电气工程—电工理论与新技术]