AlGaN日盲紫外光电二极管光谱响应特性仿真及验证  

The Simulation and Verification of Spectral Response Characteristics for the Solar-blind AlGaN Ultraviolet Photodiodes

作　　者：申志辉[1] 罗木昌[1] 周勋[1] 王颖[2] 

机构地区：[1]重庆光电技术研究所,重庆400060 [2]上海传输线研究所,上海200437

出　　处：《红外技术》2013年第11期683-686,701,共5页Infrared Technology

摘　　要：对日盲AlGaN光电探测器的光谱响应特性进行了仿真模拟,并将仿真结果与实测数据进行了比较分析,发现差异来自AlGaN材料的带尾效应。利用无p型层的材料透过率数据提取了器件吸收层截止波长附近的光吸收系数,并使用带尾吸收模型对测得的光吸收系数进行拟合,得到了AlGaN材料吸收带尾特征参数g、EUrbach分别为2.2×104cm-1、0.027 eV,补充和修正了AlGaN材料带内外光吸收模型,经验证使用该模型的仿真结果与实测结果具有很好的一致性。In this paper, the spectral response of the solar-blind A1GaN photodetectors was simulated and compared with the testing result, which indicated that the difference came from the Urbach effect. The absorption coefficient of the i-layer was extracted from the transmittance data of the device without P-layers, and the Urbach tail parameter g, EtJrbach of A1GaN were figured out after curve-fitting, which were 2.2x10^4 cm-1 and 0.027 eV respectively. Good consistency was obtained between the simulation and the measured results for spectral response based on the modified absorption model.

关 键 词：AlGaN光电探测器 日盲紫外 仿真 吸收系数 Urbach带尾 

分 类 号：TN364.2[电子电信—物理电子学]