Epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer  

作　　者：张心强 屠海令 魏峰 熊玉华 杨萌萌 赵洪滨 杜军 王文武 

机构地区：[1]Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals [2]National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals [3]Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Journal of Rare Earths》2013年第11期1092-1095,共4页稀土学报（英文版）

基　　金：supported by National Natural Science Foundation of China(50932001);National Science and Technology Major Projects(2009ZX02039-005,51102020,51202013)

摘　　要：The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.

关 键 词：dielectric material epitaxial growth interface Gd203 HFO2 rare earths 

分 类 号：TN304.054[电子电信—物理电子学]