Cu层溅射时间对两种ZnO复合透明导电薄膜光电性能的影响  

Influence of Cu sputtering time on photoelectric properties of ZnO transparent conductive multilayer films

作　　者：陈薇薇[1] 张冰[1] 刘志学[1] 赵立萍[1] 

机构地区：[1]牡丹江师范学院新型碳基功能与超硬材料黑龙江省重点实验室,黑龙江牡丹江157012

出　　处：《真空》2013年第6期19-22,共4页Vacuum

基　　金：牡丹江师范学院科研项目(QZ201215);牡丹江师范学院科研项目(QY201213;QZ201217;QY201105);牡丹江市科学技术计划项目(Z2012g0004)

摘　　要：本文采用射频反应磁控溅射法溅射ZnO靶,直流磁控溅射法溅射Cu靶,在玻璃衬底上制备了不同复合结构的Cu、ZnO透明导电薄膜,研究了Cu层溅射时间对薄膜结构形貌和光电性能的影响。结果表明Cu夹层对膜系的导电性起主要作用,电阻率先随沉积Cu层溅射时间的增加而显著降低,后变化趋于平缓。样品可见光范围内透射率随Cu层溅射时间增加而降低。并且比较相同条件下制备的两种薄膜后得出,ZnO/Cu薄膜电阻率相对较低,ZnO/Cu/ZnO薄膜透射率相对略高。Two kinds of transparent conductive ZnO and Cu multilayer films were prepared on glass substrates by RF reactive magnetron sputtering Zn and DC magnetron sputtering Cu. The influence of Cu sputtering time on the crystal structure and phtoelectric properties were discussed. The results show that the Cu interlayer plays a major role in the resistivity of ZnO muhilayer films. The decrease of resistivity slow down alter and the optical transmittance decrease in visible wavelength region with increasing the Cu sputtering time. By comparing two kinds of films prepared by the same conditions, it shows that the resistivity of ZnO/Cu films is a little smaller and the optical transmittance of ZnO/Cu/ZnO films is slightly higher.

关 键 词：ZnO复合薄膜 磁控溅射 光电性能 

分 类 号：TB43[一般工业技术]