日盲型AlGaN pin串联紫外探测器  

AlGaN pin Solar-blind Series Connection Ultraviolet Detectors

作　　者：陶利友[1,2] 张燕[1] 刘福浩[1,2] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院大学,北京100039

出　　处：《半导体光电》2013年第5期738-741,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61204134;61106097)

摘　　要：对采用MOCVD生长的AlGaN pin结构上制备的背照日盲型3×3AlGaN串联紫外探测器进行了光电性能的研究。室温下单元探测器的峰值响应在278nm为0.03A/W。串联器件的正向开启电压随器件个数增加而增大,串联特性使得其暗电流较小,光生电压随器件个数的增加呈线性变化,串联器件在氙灯照射下能达到近15V的光生电压。文中还对I-V测试采样中存在的零点漂移做了分析,试给出从实验结果计算反向饱和电流密度的方法。The photoelectric properties of back-illuminated solar-blind 3 × 3 series connection UV detectors grown by MOCVD on AlGaN pin structure were analyzed. It is shown that the peak response of every detector at 278 nm is 0.03 A/W at room temperature, the turn-on voltage of series connection devices increases with the number of devices, but the photovoltage changes linearly with the increase of the devices number. The nine-serial devices under xenon lamp irradiation can reach nearly 15 V photovoltage. Based on analyzing the zero drift in I-V sampling tests, the methods for calculating reverse saturation current density are given.

关 键 词：紫外探测器 光生电压 ALGAN 串联 反向饱和电流密度 

分 类 号：TN312.4[电子电信—物理电子学]