Fabrication and characterization of graphene derived from SiC  

作　　者：JIA YuPing GUO LiWei LU Wei GUO Yu LIN JingJing ZHU KaiXing CHEN LianLian HUANG QingSong HUANG Jiao LI ZhiLin CHEN XiaoLong 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第12期2386-2394,共9页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Ministry of Science and Technology of China(Grant No.2011CB932700);the Knowledge Innovation Project of Chinese Academy of Science(Grant No.KJCX2-YW-W22);the National Natural Science Foundation of China(Grant Nos.51272279 and51072223)

摘　　要：Using novel ideas for the fabrication of epitaxial graphene （EG） on SiC, two forms of graphene termed as vertical aligned gra- phene sheets （VAGS） and graphene covered SiC powder （GCSP） were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor （FET） and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC （0001） showed an average sheet resistance about 720 D,/~5 with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregu- lar zigzag edges is also reported.Using novel ideas for the fabrication of epitaxial graphene(EG)on SiC,two forms of graphene termed as vertical aligned graphene sheets(VAGS)and graphene covered SiC powder(GCSP)were derived,respectively,from SiC slices and SiC powder,aimed for applications in energy storage and photocatalysis.Herein,the fabrication procedures,morphology characteristics,some intrinsic physical properties and performances for applications in field effect transistor(FET)and cold cathode field emission source are revealed and analyzed based on the graphene materials.The EG on a 2-inch SiC(0001)showed an average sheet resistance about 720/with a non-uniformity 7.2%.The FETs fabricated on the EG possessed a cutoff frequency 80GHz.Based on the VAGS derived from a completely carbonized SiC slice,a magnetic phase diagram of graphene with irregular zigzag edges is also reported.

关 键 词：GRAPHENE SIC MORPHOLOGY RAMAN field emission MAGNETISM 

分 类 号：TN304.24[电子电信—物理电子学]