基于频率响应的IGBT模块内部缺陷诊断  

Internal Defects Diagnosis of IGBT Module Based on Frequency Response

作　　者：周生奇[1] 周雒维[1] 孙鹏菊[1] 吴军科[1] 李亚萍[1] 

机构地区：[1]重庆大学输配电装备及系统安全与新技术国家重点实验室,重庆400030

出　　处：《高电压技术》2013年第11期2670-2677,共8页High Voltage Engineering

基　　金：国家自然科学基金(51077137;51137006);国际科技合作计划(2010DFA72250)~~

摘　　要：为提高绝缘栅门极晶体管(insulated gate bipolar transistor,IGBT)模块运行的可靠性,研究了缺陷对IGBT模块内部寄生参数的影响,提出了一种基于频率响应的IGBT模块内部缺陷诊断方法,并对其工作原理和性能特点进行了详细分析。该方法基于IGBT模块失效过程中电或热老化导致的内部寄生参数变化,即在IGBT模块集射极开路状态下,通过在门极与发射极之间施加扫频激励信号,获取不同运行阶段集射极响应频谱的变化,由此判断IGBT模块内部是否存在缺陷。实验研究结果证实,所提出的方法可以有效辨识IGBT模块内部硅片失效缺陷,能够为及时替换赢得时间,从而避免模块的完全失效及由此造成的装置损坏,与现有的故障诊断方法相比,其响应时间更充裕。In order to improve the reliability of insulated gate bipolar transistors （IGBTs） under operation condition, we analyzed the influence of internal defects on parasitic parameters inside the IGBT module, and thereby proposed a novel diagnostic method for defecting internal defects of IGBT with detailed analysis of its principle and characteristics. This method based on the fact that parasitic parameters inside IGBTs will change with time in the aging process of the IGBT module due to internal defects caused by electrical or thermal stress, i.e. , these internal defects have an effect on the network composed by those parasitic parameters at off--state. If scanning excitation signal is applied between gate and emitter terminals of the IGBT module, the corresponding frequency response of collector against emitter will be changed accordingly, and then the difference can be seen as an external indication of the impeding failure of the IGBT module. Monitoring this precursor parameter will enable the development of a diagnostic methodology for internal defects detection of the IGBT module. The experimental results show that the method is able to accurately detect chip failure in the IGBT module, which will give the operators enough time to find out an unhealthy IGBT module in a prefault condition and replace it timely to avoid breakdown and subsequently collateral damage to the rest of the power electronic converter. Compared to traditional fault diagnosis methods for the IGBT module, the prominent advantage of this method is its more sufficient response time.

关 键 词：可靠性 缺陷 IGBT模块 脉冲响应 频率响应分析 寄生参数 

分 类 号：TN322.8[电子电信—物理电子学]