一种p型功率管栅极驱动电路的设计  

Design of a gate-driving circuit with p type power MOSFET

作　　者：丁璐璐[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《电子元件与材料》2013年第12期45-48,共4页Electronic Components And Materials

基　　金：国家自然科学基金重大资助项目(No.60990320;No.60990323);国家自然科学基金面上资助项目(No.61271090);国家高技术研究发展计划(863计划)重大资助项目(No.2012AA012305);四川省科技支撑计划资助项目(No.2012GZ0101)

摘　　要：为p型功率管的USB保护芯片设计了一款栅极驱动电路。针对VBUS电压过高,不能及时断开输入,导致芯片内部损坏的问题,使用一个npn管在栅极驱动电路内部实现了过压保护且有迟滞功能。在0.5μm BCD工艺下的仿真结果显示:该驱动电路在1.1 V的低压下就可以正常工作,而且在启动过程中输出电压平滑上升,无过冲;该驱动电路可以根据需求调节过压保护的门限和迟滞,使芯片更加安全可靠且该驱动电路结构简单。A gate-driving circuit with p type power MOSFET in USB protection chip was designed. The chip would be damaged if the chip couldn＇t disconnect the input in time in case of high Vaus, for this, the design skillfully used a npn transistor to realize the function of overvoltage protection and hysteresis inside the gate-driving circuit. The simulation result in the process of 0.5 μm BCD shows： the gate-driving circuit can work normally under the low voltage of l.l V, and the output voltage rises smoothly without overshoot during startup; the gate-driving circuit can adjust overvoltage protection threshold and hysteresis, so the chip has high reliability, in the same time, the gate-driving circuit is simple.

关 键 词：栅极驱动 过压保护 USB 低压启动 p型功率管 软启动 

分 类 号：TN43[电子电信—微电子学与固体电子学]