碳化硅晶体中异质包裹物与微管道缺陷的关系  

Relationship between heterogeneous inclusions and micropipes in SiC crystals

作　　者：孟大磊[1] 徐永宽[1] 冯玢[1] 郝建民[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《兵器材料科学与工程》2013年第6期72-75,共4页Ordnance Material Science and Engineering

摘　　要：对物理气相传输法(PVT)生长的碳化硅单晶中异质包裹物与微管道缺陷之间的关系进行了研究。首先对生长系统中的气体组分进行热力学分析,进而对碳化硅晶片作光学显微镜和扫描电子显微镜观测,在此基础上分析了异质包裹物的生成及其对微管道缺陷产生的影响。发现在生长初期富硅的气氛会在晶体中引入异质相,而异质相的化学计量比失衡会成为诱发微管产生的源头。The relationship between heterogeneous inclusions and micropipes in SiC single crystals grown by the physical vapor transport（PVT）process was investigated. Thermodynamic analysis on the vapor phase in growth system was carried out. The SiC wafers were observed by optical and scanning electron microscopy. On this basis,the formation of heterogeneous inclusions and its effect on the generation of micropipes were investigated. It is found that the heterogeneous phase is induced in SiC crystal by Si-rich vapor at first growth stage,and the stoichiometric unbalance of heterogeneous phase is the origin of micropipe.

关 键 词：日碳化硅 Gibbs函数 异质包裹物 微管 

分 类 号：O775[理学—晶体学]