PH_3/SiH_4气流量比对N型a-Si:H薄膜微观结构与电学性能的影响  

Effect of PH_3/SiH_4 Gas Flow Ratio on Microstructures and Electrical Properties of N-type a-Si:H Films

作　　者：董丹[1] 时惠英[1] 蒋百灵[1] 鲁媛媛[1] 张岩 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048 [2]西安黄河光伏科技股份有限公司,西安710043

出　　处：《硅酸盐学报》2013年第12期1668-1673,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51271144)资助

摘　　要：采用等离子体增强化学气相沉积法制备了不同PH3/SiH4气流量比条件下的N型a-Si:H系列薄膜,研究了PH3/SiH4气流量比对N型a-Si:H薄膜微结构和电学性能的影响;同时,对最优PH3/SiH4气流量比条件下的N型a-Si:H薄膜进行了真空退火处理,以研究薄膜晶体结构的改变对其性能的影响。结果表明:随着PH3/SiH4气流量比的增加,N型a-Si:H薄膜的非晶结构没有实质改变,但其电学性能得到明显改善;在最佳的PH3/SiH4气流量比为1.5%时制备的薄膜,经真空退火处理后,N型a-Si:H薄膜的有序度明显提高,电阻率比退火前降低3个数量级。退火处理对薄膜的晶体结构影响较大,从而对薄膜电学性能的改善更为显著。A series of N-type a-Si：H films were prepared by a plasma enhanced chemical vapor deposition method at different PHa/SiHg-doped flow ratios. The N-type a-Si：H film with the optimal PHa/SiH4 flow ratio was annealed in vacuum. The influence of PH3/SiH4 flow ratio on the microstructures and properties of a-Si：H films was investigated. The results indicate that the microstructure of N type a-Si：H films has no substantial change, but the electrical properties improves when PHa/SiH4 flow ratio increases. The a-Si：H film sample prepared at an optimal PHa/SiH4 flow ratio of 1.5%. The order degree of the film after vacuum annealing increases The resistivity of the film after annealing is decreased by 3 orders of magnitude. The annealing treatment of the film has an influence on the crystal structure, thus improving the electrical properties of the film.

关 键 词：磷掺杂氢化非晶硅薄膜 磷掺杂比 退火 载流子浓度 电阻率 

分 类 号：TB321[一般工业技术—材料科学与工程]