InAs(001)表面脱氧动力学分析  

Thermodynamic study on two-step desorption of oxides on InAs(001) surface

作　　者：魏文喆 郭祥[1] 刘珂[1] 王一[1] 罗子江[2] 周清[1] 王继红[1] 丁召[1] 

机构地区：[1]贵州大学理学院,贵阳550025 [2]贵州财经学院教育管理学院,贵阳550004

出　　处：《物理学报》2013年第22期351-357,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60866001);教育部博士点基金(批准号:20105201110003)资助的课题~~

摘　　要：利用反射式高能电子衍射(RHEED)实时监控对InAs衬底进行两步完全脱氧的过程,对比了有低(高)砷等效束流压强保护下采用两步法对InAs衬底缓慢长时间的高温脱氧过程.InAs衬底两步完全脱氧法的第一步为传统的缓慢升温脱氧方法,第二步为高温In束流辅助脱氧方法.衬底高温脱氧的RHEED衍射图样说明了高温In束流辅助脱氧最终完全清除传统的缓慢升温法无法去掉的残留氧化物,通过脱氧完成同质外延生长后的扫描隧道显微镜图像,说明高砷等效束流压强保护下的脱氧方法是可行的;分析了高温In束流能完全清除衬底表面残余In氧化物的原理.Reflection high energy electron diffraction （RHEED） is used to monitor the two-step desorption of oxides on InAs（001） surface in the vacuum chamber, and the high temperature indium-assisted desorption processes of surface oxides under high arsenic pressure and low arsenic pressure are compared. The first step of two-step deoxidation method for InAs substrate is to heat the substrate slowly at high temperature. The second step is high temperature indium beam-assisted desorption of surface oxides. The RHEED patterns of sample at high temperature desorption of oxides show that the high temperature indium beam-assisted desorption of InAs surface oxide method could eventually clear residual oxide that the traditional slow heating method cannot remove. The scanning tunneling microscope images of sample after homogeneous epitaxial growth prove the viability of high-heat indium beam-assisted desorption of InAs surface oxide under high arsenic pressure. Finally, we analyse the mechanism of high-heat indium beam assisted desorption of surface oxides of substrate.

关 键 词：热分解 Ⅲ—Ⅴ族半导体 反射式高能电子衍射 

分 类 号：TN304[电子电信—物理电子学]