硅片背面软损伤工艺技术研究  

Methods of Backside Soft Damage and Particles Controlling for Silicon Wafers

作　　者：武永超[1] 赵权[1] 陆峰[1] 佟丽英[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2013年第11期12-18,共7页Equipment for Electronic Products Manufacturing

摘　　要：硅中的金属离子杂质会明显降低少子寿命,并进一步影响硅器件的性能。因此对硅片背面喷砂工艺进行了系统的研究。通过喷砂工艺,在硅片背面形成软损伤层,使硅片具有了吸杂能力,并从吸杂机理出发,解决了吸杂工艺带来的硅抛光片表面颗粒效应,并对硅抛光片的吸杂效果及表面颗粒度进行了表征,为具有吸杂性能的"开盒即用"硅抛光片的批量化生产提供了有力的技术保证。metal atoms in silicon wafers will decrease the lifetime of minor carriers and have great effect on the electrical properties of semiconductor devices.We investigated the methods of damging the wafer backsides by abrasive blasting which can make the silicon wafers gain gettering property in this paper.First of all, we observed the gettering effects after the polished wafers were heat-treated with microscope.Then we controlled the number of particles on the wafer surface which were caused by the overly damage of silicon wafer.

关 键 词：喷砂工艺 硅片软损伤吸杂 颗粒去除 金属 

分 类 号：TN305.2[电子电信—物理电子学]