非对称超大光腔980nm大功率半导体激光器  

980 nm High Power Semiconductor Laser with Asymmetric Super Large Optical Cavity

作　　者：李建军[1] 崔碧峰[1] 邓军[1] 韩军[1] 刘涛[1] 李佳莼[1] 计伟[1] 张松[1] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124

出　　处：《中国激光》2013年第11期57-61,共5页Chinese Journal of Lasers

基　　金：北京工业大学先进技术基金(002000514312003)

摘　　要：为了制备高输出功率的半导体激光器,设计了非对称超大光腔波导结构,其中大光腔结构用以提高器件的灾变性腔面烧毁(COMD)水平,非对称波导则抑制高阶模的激射,并分析了非对称波导层厚度的理论优化值。优化了有源区的金属有机物化学汽相沉积(MOCVD)外延生长条件,结合管芯电极制备及腔面镀膜等工艺条件,制备了腔长为4mm的2μm超大光腔端面发射980nm半导体激光器管芯。在室温、注入电流为30A且未采取任何主动散热措施的条件下,器件输出功率达到23.6W,未出现COMD。非对称波导保证了垂直方向仅有基模激射,且超大光腔的采用使得垂直远场发散角只有24°。研究结果表明,非对称超大光腔结构是制备高功率半导体激光器的有效途径。An asymmetric super large optical cavity waveguide is designed to realize the high output power semiconductor laser, in which the super large optical cavity is used to raise the catastrophic optical mirror damage （COMD） limit, and the asymmetric waveguide is used to inhibit the lasing of higher order modes. Meanwhile, the optimized thickness of the asymmetric waveguide is analyzed. By optimizing the process condition of metal organic chemical vapor disposition （MOCVD） epitaxy for the active layer, and combining with the electrode fabrication and facet coating, a 4-ram cavity length semiconductor laser die with 2μm super large optical cavity waveguide at 980 nm wavelength is fabricated. Without any active cooling process, an output power of 23.6 W is reached with injection current of 30 A without COMD at room temperature. Because of the introducing of the super large optical cavity waveguide, the far field test shows that only the transverse fundamental mode is lased with a vertical far field angle of 24°. The results show that the asymmetric super large optical cavity structure is an effective way to get the high output power of semiconductor laser.

关 键 词：激光器 半导体激光器 波导 量子阱 金属有机物化学汽相沉积 

分 类 号：TN248.4[电子电信—物理电子学]