缓冲层对AZO薄膜的性能影响  

Effect of Buffer Layers on the Properties of Al-Doped ZnO Films

作　　者：李长山[1] 赵鹤平[1] 肖立娟[1] 郝嘉伟[1] 

机构地区：[1]吉首大学物理与机电工程学院,湖南吉首416000

出　　处：《吉首大学学报（自然科学版）》2013年第3期31-34,共4页Journal of Jishou University(Natural Sciences Edition)

基　　金：湖南省自然科学基金资助项目(09JJ6011);湖南省高等学校科研基金资助项目(08A035);湖南省研究生科研创新项目(CX2011B399)

摘　　要：采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明,加入缓冲层的薄膜具有更好的c轴择优取向,薄膜的表面平整,结晶质量有所改善,薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4Ω·cm,导电性能得到明显提高.AZO films with Al2O3 and ZnO buffer layers were deposited by RF magnetron sputtering.The structure and optoelectronic properties of AZO films were analyzed by some characterization instruments,such as X-ray diffractometer（XRD）,scanning electron micro-scope（SEM）,UV-visible spectrophotometer,Hall test.The results show that the films with buffer layers have better c-axis preferred orientation,and smooth surface.The crystal quality has been improved.The transmittance of films is over 80% in the visible range.AZO films deposited on ZnO buffer layer have the lowest resistivity of 5.8×10-4 Ω·cm,and the conductive property of the films is improved obviously.

关 键 词：AZO薄膜 缓冲层 透过率 光电特性 

分 类 号：O484[理学—固体物理]