GaAsE/DPHEMT正压驱动单片数控衰减器  

GaAs E /D PHEMT Positive Control Digital Attenuator MMIC

作　　者：白元亮[1] 张晓鹏[1] 陈凤霞[1] 默立冬[1] 

机构地区：[1]中国电子科技集团公司 第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第12期910-913,923,共5页Semiconductor Technology

摘　　要：采用将正压数字驱动电路和微波衰减器集成在同一单片上的方法,设计制作了6 bit正压驱动数控衰减器单片电路。分析了几种衰减电路原理,以及增强/耗尽型(E/D)PHEMT正压驱动电路原理。采用桥T型结构衰减电路单元、E/D PHEMT控制电路设计了数控衰减器单片电路。基于GaAs E/D PHEMT工艺,流片制作了数控衰减器单片电路。测试结果表明,在DC^4 GHz带宽内,插入损耗L i≤2.9 dB,输入输出回波损耗L r≤-15 dB,衰减精度e bit≤±(0.4+3%×Att)dB(Att为衰减量)。电路具有衰减精度高、线性度好和芯片面积小等特点。内置的E/D PHEMT正压控制电路,可减小控制信号布线面积。采用单正压电源供电使电路更易使用。The driver circuit and microwave digital attenuator controlled by positive voltage were integrated on one chip. By this way, a 6 bit positive voltage control digital MMIC attenuator was designed and fabricated. The attenuation circuit and enhancement/depletion （E/D） PHEMT positive voltage control driver circuit were analyzed. The digital controlling MMIC attenuator was designed by the bridge-T type networks attenuator and E/D PHEMT driver circuit. Based on GaAs E/D PHEMT process, the digital control MMIC attenuator was produced . Test results show that at the bandwidth of DC -4 GHz, the insertion loss （Att is attenuation） ≤2. 9 dB, the input output return loss Lr ≤ -15 dB, the attenuation accuracyebit≤± （0. 4 ＋ 3% ×Att） dB. The MMIC attenuator has the merits of accurate attenuation, high linearity and small chip size. The E/D PHEMT positive voltage control driver circuit can reduce system control lines area, and single positive voltage power supply made the circuit easy to use.

关 键 词：砷化镓 增强 耗尽型(E D) 赝配高电子迁移率晶体管(PHEMT) 6 bit单片数控衰减器 正压控制电路 

分 类 号：TN43[电子电信—微电子学与固体电子学]