GaN nanopillars with a nickel nano-island mask  

作　　者：林增钦 修向前 张世英 华雪梅 谢自力 张荣 陈鹏 韩平 郑有炓 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University

出　　处：《Journal of Semiconductors》2013年第12期21-25,共5页半导体学报（英文版）

基　　金：Project supported by the Special Funds for Major State Basic Research Project(Nos.2011CB301900,2012CB619304,2010CB327504);the Hi-Tech Research Project(No.2011AA03A103);the National Natural Science Foundation of China(Nos.60990311,61274003,60936004,61176063);the Natural Science Foundation of Jiangsu Province(No.BK2011010)

摘　　要：Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 10^8 cm^-2 were demonstrated and controlled by the thickness of Ni film and the NH3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.Uniform GaN nanopillar arrays have been successfully fabricated by inductively coupled plasma etching using self-organized nickel nano-islands as the masks on GaN/sapphire. GaN nanopillars with diameters of 350 nm and densities of 2.6 × 10^8 cm^-2 were demonstrated and controlled by the thickness of Ni film and the NH3 annealing time. These GaN nanopillars show improved optical properties and strain change compared to that of GaN film before ICP etching. Such structures with large-area uniformity and high density could provide additional advantages for light emission of light-emitting diodes, quality improvement of ELO regrowth, etc.

关 键 词：GaN nanopillars nickel nano-island thermal ammonia etching MASK ICP SEM 

分 类 号：TN304[电子电信—物理电子学]