NiO插层和基片温度对超薄坡莫合金薄膜各向异性磁电阻的影响  

Effects of NiO layer and substrate temperature on the anisotropy magnetoresistance of ultrathin permalloy films

作　　者：张慧[1] 王书运[1] 高垣梅[1] 王存涛[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《磁性材料及器件》2013年第6期1-4,9,共5页Journal of Magnetic Materials and Devices

摘　　要：利用多靶磁控溅射系统在康宁玻璃基片上制备了Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm)系列坡莫合金薄膜样品,研究了NiO插层厚度、基片温度对其各向异性磁电阻和微结构的影响。利用四探针技术测量薄膜样品的各向异性磁电阻比(AMR),利用X射线衍射仪(XRD)分析样品的相结构,用原子力显微镜(AFM)分析样品的表面形貌。结果表明,由于NiO插层的"镜面反射"作用,选择适当厚度的NiO插层能够大幅度提高坡莫合金薄膜各向异性磁电阻比和磁场灵敏度。对于厚度为20nm的Ni81Fe19薄膜,当基片温度为450℃时,通过插入4nm厚的NiO插层可使AMR值达到5.01%,比无NiO插层时提高了40%。A series of Ta（4nm）/NiO（t）/Ni81Fe19（20nm）/NiO（t）/Ta（3nm） ultrathin films were prepared using direct current magnetron sputtering system under appropriate conditions. Influence of NiO layer and substrate temperature on AMR of the samples are investigated. AMR value of Ni81Fe19films are measured by four-point probe technology, the phase composition was characterized by X-ray diffraction, and surface topography of Ni81Fe19films was observed by AFM. The experiment result shows that NiO layer with appropriate thickness could increase AMR greatly and its magnetic sensitivity of NiFe films due to the specular reflection of NiO layer. When sputtered at 450℃, the20nm-thickness permalloy films with 4nm-thickness NiO laye has AMR value of 5.01%, increasing by 40% than that of film without NiO layer.

关 键 词：坡莫合金薄膜 各向异性磁电阻 NiO插层 基片温度 

分 类 号：O484.43[理学—固体物理]