升华法生长氮化铝晶体的热场分析  

Thermal Field Analysis of AlN Crystal Grown by Sublimation Method

作　　者：武红磊[1] 郑瑞生[1] 李萌萌[1] 闫征[1] 郑伟[1] 徐百胜 

机构地区：[1]深圳大学光电工程学院光电子器件与系统教育部/广东省重点实验室,深圳518060

出　　处：《人工晶体学报》2013年第11期2275-2279,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(61136001);973计划前期研究专项(2010CB635115);深圳市科技计划项目(20120821110533437)

摘　　要：本文使用有限元法模拟氮化铝晶体生长系统的温度场,分析了坩埚的位置、感应线圈的匝间距以及原料与晶体之间的距离对温度场分布的影响。结果表明:坩埚位置主要影响系统中最高温度的位置及温度梯度的大小;原料与结晶体之间的距离仅对温度梯度有影响;感应线圈的匝间距则影响加热效率的高低。通过合理优化以上三个条件,可以获得适宜于高品质氮化铝晶体快速制备的理想热场。The temperature field of AlN crystal growth were simulated by the finite element method.TThe influence of crucible position, spaces between turns of inductive coil and distance of AlN source and asgrown crystal on the temperature distribution were studied, he results showed that the temperature gradient in the crucible is related to the coil position and the distance of A1N source and as-grown crystal, which affects the highest temperature zone in the crucible. The coupling clearances of coils have influences on the heating efficiency. The three conditions can be optimized to provide the ideal temperature field of A1N crystal growth.

关 键 词：升华 温度场 氮化铝晶体 有限元 

分 类 号：O782[理学—晶体学] TN304.2[电子电信—物理电子学]