高温退火后含He纳米晶钛膜中He相关缺陷的演化  

Evolution of Helium-Related Defects in Helium-Containing Nanocrystalline Titanium Films After High Temperature Annealing

作　　者：李悦[1] 邓爱红[1] 刘莉[2] 王康[1] 谢莎[1] 

机构地区：[1]四川大学物理科学与技术学院物理系,成都610065 [2]西南民族大学计算机科学与技术学院,成都610041

出　　处：《材料研究学报》2013年第6期610-614,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金11275132资助项目~~

摘　　要：利用X射线衍射(XRD)和慢正电子束分析(SPBA)技术研究高温退火后含He钛膜的微观结构和钛膜内He相关缺陷的演化。XRD分析表明,高温退火后Ti和Si在高温下发生反应形成稳定的多晶TiSi2化合物,He原子的掺入会影响TiSi2晶体的择优取向,而对TiSi2晶粒尺寸的影响较小。SPBA结果表明,室温下,钛膜内的缺陷浓度或尺寸会随着掺He浓度的增加而增大;高温退火后,当He浓度小于5%(原子分数,下同)时(除2%外),钛膜内的He相关缺陷浓度随着He浓度增加相应地增加。当He浓度增加到14%时,高温会使较高浓度的He原子、He-空位复合体以及小He泡迁移聚集形成一些尺寸较大He泡,而较大He泡周围与He相关的小尺寸缺陷的浓度则会发生相应地减少。The microstructure of annealing He-Ti films and evolution of corresponding helium-related defects were studied by X-ray diffraction （XRD） and slow positron beam analysis （SPBA） respectively. Re- sults of XRD indicate that Ti reacts with Si to form the stable polycrystalline TiSi2 compound after high temperature annealing. The preferred orientation of TiSi2 could be mainly affected by the incorporation of helium atoms, while helium atoms introduced weakly influence on the grain sizes of TiSi2 compound. The results of SPBA demonstrate that helium-related defects increase with the increasing of the He concentra- tion at room temperature. Furthermore, when He concentration is below 5%, except for 2% sample the concentrations of He-related defects raise correspondingly as the helium concentration grows after an- nealing. However, when the He concentration reaches up to 14%, high-concentration helium atoms, heli- um-filled vacancy clusters and small size of He bubbles tend to migrate and coalesce to form larger He bubbles under high temperature annealing conditions, thus small helium-related defects which are close to surrounding of larger bubbles will accordingly reduce.

关 键 词：金属材料 含He钛膜 直流磁控溅射 He相关缺陷 XRD SPBA 

分 类 号：TG172[金属学及工艺—金属表面处理]