光电化学法研究316L不锈钢在高温水中生成氧化膜的半导体性质  

Photo-electrochemical Study on Semiconductor Properties of Oxide Films Formed on 316L Stainless Steel in High Temperature Water

作　　者：檀玉[1] 梁可心[1] 张胜寒[1] 

机构地区：[1]华北电力大学环境科学与工程学院,保定071003

出　　处：《中国腐蚀与防护学报》2013年第6期491-495,共5页Journal of Chinese Society For Corrosion and Protection

基　　金：中央高校基本科研业务费专项资金(13MS80)资助

摘　　要：采用光电化学响应法研究了316LSS在288℃高温水中形成的氧化膜的半导体性质，获得3个主要响应：带隙宽度2．3eV认为是Fe氧化物Fe2O3和／或Ni的氢氧化物Ni（OH）2的特征带隙宽度；2．9和3．5eV认为是Cr氧化物Cr2O3的特征带隙宽度；4．1～4．4eV认为是FexNi1-xCr2O4的特征带隙宽度。通过光电流响应与施加偏压的实验可知，316LSS在此高温水中生成的氧化膜表现为n型半导体性质。The semiconductor property of oxide films formed on 316L stainless steel in high temperature water was investigated by photoelectrochemical responses technique. The photocurrent spectra of the oxide film formed on 316LSS in water at 288 ℃ showed three major characteristics： a band gap energy of 2.3 eV was attributed to the presence of Fe2O3, and/or Ni（OH）2; a band gap energy of 2.9 and 3.5 eV was attributed to Cr2O3 and a band gap energy in the range of 4.1 - 4.4 eV was attributed to the spinel phase Fe1-xNixCr2O4. Considering the relation of the photocurrent to the applied potential, it follows that the oxide film on 316L in high temperature water indicated an n- type semiconductor. Therefore, the photoelectrochemical responses technique, with full information about the photoctLrrent and the dephasing angles of the oxide films, represents a sensitive and oowerful way to locally analvze the various oxide phases in the oxide scale.

关 键 词：光电化学响应 316L不锈钢 氧化膜 半导体性质 高温水 

分 类 号：O646[理学—物理化学]