增强调制掺杂Si_(80)Ge_(20)基热电材料功率因子的研究  

Study on Enhanced and Modulation-Doped Si_(80)Ge_(20) Thermal Material Power Factor

作　　者：龚晓钟[1] 吴振兴[2] 刘正楷[1] 王涵[1] 彭雨辰[1] 汤皎宁[1] 

机构地区：[1]深圳大学,广东深圳518060 [2]深圳市药品检验所,广东深圳518057

出　　处：《稀有金属材料与工程》2013年第12期2490-2493,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(51171117);广东省科技计划项目(2006B14001001);深圳市科技计划项目(CXB200903090012A)

摘　　要：采用成熟工艺制备了N型、P型调制掺杂型Si80Ge20基固溶体合金及等化学计量比的均匀掺杂型Si80Ge20基固溶体合金,重点研究了两类固溶体合金的热电性能。结果表明:温度为773 K时,N型系列、P型系列,调制掺杂型固溶体合金较均匀掺杂型的功率因子分别提高了13.6%和49.2%,热电优值ZT分别提高了7.9%和12.9%。N-type, P-type modulation-doped Si80Ge20 solid solution alloy and equivalent stoichiometric ratio uniform-doped Si80Ge20 solid solution alloy were prepared by our mature technologies. We concentrated on the thermoelectric properties of both alloy materials. The results show that the power factors of N-type, P-type modulation-doped solid solution alloys are enhanced by 13.6% and 49.2% respectively, compared with that of uniform-doped Si80Ge20 solid solution alloy. And their ZT （thermoelectric figure of merit） are enhanced by 7.9% and 12.9%, respectively.

关 键 词：热电材料 Si80Ge20固溶体合金 功率因子 热电性能 调制掺杂 

分 类 号：TB34[一般工业技术—材料科学与工程]