特高压交流盆式绝缘子电场分布计算及屏蔽罩结构优化  

Electric Field Distribution Calculation and Shielding Electrode Structure Optimization of UHVAC Basin-type Insulator

作　　者：杜进桥[1] 张施令[1] 李乃一[1] 彭宗仁[1] 

机构地区：[1]西安交通大学电力设备电气绝缘国家重点实验室,西安710049

出　　处：《高电压技术》2013年第12期3037-3043,共7页High Voltage Engineering

基　　金：国家电网公司科技项目(编号略)~~

摘　　要：为提高特高压盆式绝缘子(BTI)可靠性,运用有限元方法计算分析了中心导体和屏蔽罩对特高压交流盆式绝缘子表面电场分布的影响。基于MATLAB和ANSYS,采用非支配排序遗传算法(NSGA-Ⅱ)对屏蔽罩结构进行优化设计。结果表明,直导体或导体有小凹槽均会导致盆体凹面靠近导体的小三角区域电场发生畸变,加装屏蔽罩可以优化屏蔽盆体表面的高电场强度区域状态。优化后的凹面最大电场强度较优化前降低7.2%,该优化方法有效改善了盆式绝缘子表面电场分布。In order to improve the reliability of UHVAC basin-type insulator（BTI）, we analyzed the effect of center conductor and shielding of BTI on its electric field distribution through finite-element calculations. Moreover, using simulation in MATLAB and ANSYS, we optimized the structure design of shielding electrode by using the nondominated sorting genetic algorithm Ⅱ （NSGA-Ⅱ ）. The simulation shows that straight conductors as well as small grooves will lead to the distortion of electric field in the small triangle area near the conductor, while the installation of shielding can effectively improve the status of the area with high electric field intensity on the surface of BTI： after optimization, the maximum electric field intensity is reduced by 7. 2%. It is concluded that the proposed method can effectively improve the electric field distribution on the surface of BTI.

关 键 词：特高压 盆式绝缘子 电场计算 有限元法 非支配排序遗传算法 优化设计 

分 类 号：TM216[一般工业技术—材料科学与工程]