氧化镍薄膜阻变特性研究进展  

Latest Development of Resistive Switching of NiO Thin Films

作　　者：李建昌[1] 王玉磊[1] 侯雪艳[1] 徐彬[1] 巴德纯[1] 

机构地区：[1]东北大学机械工程与自动化学院真空与流体工程研究中心,沈阳110819

出　　处：《真空科学与技术学报》2013年第12期1251-1259,共9页Chinese Journal of Vacuum Science and Technology

基　　金：中央高校基本科研业务费专项资金资助项目(N110403001)

摘　　要：氧化镍薄膜因非挥发性、低功耗、开关重复性好及阻值窗口大等优势而成为广泛研究的阻变材料之一。本文从器件结构、阻变机理及影响因素等方面,综述了氧化镍薄膜阻变特性研究进展。结果表明:氧化镍薄膜阻变机理主要为金属细丝或空位细丝,但有关细丝形成条件仍无定论;引入PN结的夹层薄膜结构因形成界面缺陷可使开关比提高三个数量级到105;高价元素替位掺杂致薄膜内Ni0浓度增大而降低其阻变离散性;薄膜厚度及退火温度与时间可明显影响其阻变阈值电压。目前有关氧化镍薄膜阻变特性研究较多,下一步可将小尺度器件、低功耗及高密度集成纳米晶阻变特性作为研究方向,深入讨论其阻变机理。The latest progress in the development of the resistive switching materials, NiO films in particular, was tentatively reviewed. The discussions centered on the structures of the device made of the resistive switching NiO films, mechanisms responsible for the resistive switching, and impacts of film growth conditions on the resistive switching charac- teristics. An increasing number of researchers concluded that the formation and rupture of the oxygen vacancy or metallic filaments is responsible for the resistive switching, but the filament formation mechanism remains elusive. Three major con- clusions have been well recognized, i）. The ON/OFF ratio can be tuned from 102 to 105 by inserting a thin interfacial layer between the cathodic electrode and NiO layer;ii）, The doping of high valence impurities results in an increased Ni0 con- tent,favorable for formation of conductive filaments;iii）. The switching threshold voltage significantly depends on the NiO film thickness, annealing temperature and time. The development trends in its microstructures characterization, integrat- ed-device fabrication, and high density information storage, were also briefly discussed.

关 键 词：氧化镍薄膜 阻变特性 开关机理 器件结构 导电细丝 

分 类 号：TQ630.1[化学工程—精细化工]