基于厚铜工艺的高Q值片上螺旋电感研究  

A High-QOn-Chip Spiral Inductor Using Thick Copper Technology

作　　者：黄寅[1,2] 毛志刚[1] 王勇[2] 赵宇航[2] 

机构地区：[1]上海交通大学微电子学院,上海200240 [2]上海集成电路研发中心有限公司,上海201210

出　　处：《微电子学》2013年第6期850-854,共5页Microelectronics

基　　金：国家科技重大专项02专项(2009ZX02303-002)

摘　　要：为了减少片上螺旋电感的金属导体损耗,基于200mm晶圆的铜后道互连工艺线,开发了适用于射频电路的3μm厚铜工艺。流片测试结果显示,基于低阻硅衬底制作的电感器件在很宽的频率范围内,其品质因子Q值超过10,最高达到19.1;建立了用于电路设计的精确电感宏模型,根据该模型仿真与实测得到的电感Q值与L值随频率变化的比较,发现在20GHz的频率应用范围内该模型具有较高的精度,误差基本在10%以内,能够满足射频电路设计的需要。A 3 μm-thick copper process for RF circuit application was developed based on 200 mm copper interconnect process, to reduce metal conductor loss of on-chip spiral inductor. Test results showed that the inductor device on low-resistivity silicon substrate, which could work in a wide frequency range, had a quality factor over 10, with a max Q value up to 19. 1. An accurate macro model of inductance was built for circuit design. Simulated Q and L values of the inductor as a function of frequency were compared with measured data on the processed wafer. Results showed that, in 20 GHz frequency range, the proposed model had a simulation error less than 10%, which is well within specification of RF circuit.

关 键 词：片上螺旋电感 厚铜工艺 品质因子 宏模型 

分 类 号：TN603.5[电子电信—电路与系统]