漏电流对量子点导纳谱分析结果的影响及修正  

Influence of the Leakage Current on the Admittance Spectroscopy of Quantum Dots and the Correction

作　　者：原凤英[1] 安立群[1] 

机构地区：[1]天津科技大学理学院,天津300222

出　　处：《天津科技大学学报》2013年第6期71-74,共4页Journal of Tianjin University of Science & Technology

基　　金：天津科技大学科学研究基金资助项目(20080206)

摘　　要：采用导纳谱对SiGe双层量子点进行测试,通过对测试数据分别进行多频和单频处理,发现两者获得的激活能存在差别,原因主要来自衬底肖特基势垒或是缺陷、杂质等漏电流产生的附加电导.因此,对量子点样品的衬底材料p型Si进行导纳谱测试,从理论上分析和给出其电导的具体形式,并给出具体参数α作为判断附加电导影响大小的依据.对量子点样品的导纳谱测试结果进行修正,在总电导上减去附加电导,使单频和多频的处理结果完全一致,从而得到更加准确的结果.Double-layer quantum dots have been studied with admittance spectroscopy. By comparing the activation energies obtained from multi-frequency admittance spectroscopy and single frequency admittance spectroscopy, the difference between activation energies was found. The reason is that the conductance acquired from the experiment came not only from the quantum dots but also the Schottky barriers or traps in the substrate. The p-Si substrate was also studied with admittance spectroscopy in order to acquire the conductance of p-Si and give a parameter α to estimate the influence of the accessional conductance. Thus, the accessional conductance could be eliminated so as to obtain more accurate results. The feasibility of the correction method has been proved by theoretical simulation.

关 键 词：量子点 导纳谱 漏电流 电导 

分 类 号：O472[理学—半导体物理]