热释电红外探测器PZT晶片粘接质量控制  

Quality Control of the PZT Wafer Bonding in Pyroelectric Infrared Detector

作　　者：黄江平[1] 冯江敏[1] 王羽[1] 苏玉辉[1] 信思树[1] 李玉英[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2013年第12期764-767,共4页Infrared Technology

摘　　要：热释电红外探测器芯片研制中,晶片粘接是芯片研制中的关键工艺之一。本文详细论述了粘接胶的选择依据及晶片粘接质量控制。确定了适合器件研制的粘接胶和粘胶工艺流程。对粘接中出现的问题及解决办法进行了讨论。研制出了完全能满足器件工艺要求的热释电探测器PZT晶片。The wafer bonding is one of the key technologies in pyroelectric infrared detector chip development. This paper discusses the selection basis of bonding glue and quality control of wafer bonding in details, also determines the adhesive glue and the technology suitable for detector development, and analyzes the problems and the resolution method in the course of wafer bonding. The PZT wafer that can fully meet the technology requirements ofpyroelectric detector is provided.

关 键 词：热释电红外探测器 粘接胶 晶片粘接 质量控制 

分 类 号：TN215[电子电信—物理电子学]