硅基氮化铝薄膜风致振动MEMS能量采集单元  

Flow-induced-vibration MEMS energy harvesting unit based on AlN film in silicon

作　　者：尚正国[1] 李东玲[1] 温志渝[1] 赵兴强[1] 

机构地区：[1]重庆大学光电工程学院,重庆400044

出　　处：《光学精密工程》2013年第12期3058-3065,共8页Optics and Precision Engineering

基　　金：十二五中期微电子预研资助项目(No.5130805214)

摘　　要：研究了基于氮化铝(AlN)薄膜的压电式风致振动微机电系统(MEMS)能量采集单元的制备工艺。采用脉冲直流磁控溅射的方法制备了具有(002)择优取向的AlN压电薄膜,并通过X射线衍射仪(XRD)及扫描电镜(SEM)表征了AlN薄膜的性能。测试结果表明:种子层材料、气体流量比和衬底温度等对AlN薄膜晶体取向及薄膜性能有重要影响。制备的具有(002)择优取向的AlN薄膜的衍射强度达到105count,半高宽为2.7°。对硅基AlN风致振动MEMS能量采集单元加工工艺流程进行优化,制备出了风致振动能量采集系统原理样机。风洞实验表明,在15.9m/s的风载荷作用下,MEMS能量采集单元的最大输出功率为1.6μW。该工艺亦可用于其他硅基AlN薄膜MEMS器件的制备。A flow-induced-vibration Micro-electronic-mechanic System（MEMS） energy harvesting unit based on an Aluminum nitride（AlN） film on the silicon was presented.The AlN film with crystal orientation（002） was prepared by DC-pulse magnetron sputtering and its performance was characterized by the X-ray Diffraction（XRD） and the Scanning Electron Microscopy（SEM）.The results show that the crystal orientation and performance of the AlN film are depended on the seed layer materials,gas flow ratio and the substrate temperature,its crystal orientation is （002）,and its intensity and Full Width at Half Maximum（FWHM） are 105 counts and 2.7°,respectively.The prototype of the flowinduced-vibration MEMS energy harvesting unit was presented after optimizing process flow.The wind tunnel experiments show that the maximum power output of the flow-induced-vibration MEMS energy harvesting unit is about 1.6 μW when the wind speed is 15.9 m/s.The optimization process also can be used to fabricate other MEMS devices based on the AlN film.

关 键 词：风致振动 MEMS能量采集 硅基氮化铝薄膜 衍射强度 摇摆曲线 

分 类 号：TK83[动力工程及工程热物理—流体机械及工程] O484.1[理学—固体物理]