电子束刻蚀中邻近效应的修正  

Proximity Effect Correction for Electron Beam Lithography

作　　者：肖沛[1] 

机构地区：[1]江苏科技大学张家港校区基础教学部,江苏张家港215600

出　　处：《佳木斯大学学报（自然科学版）》2013年第6期957-960,共4页Journal of Jiamusi University：Natural Science Edition

摘　　要：以拓展的三高斯邻近效应函数为基础,利用空间图形密度方法对电子刻蚀中的邻近效应进行修正,并对该方法的原理及实现步骤进行了较为详细的介绍.通过和传统的邻近函数为基础得到的修正结果相比,经过拓展后的邻近函数有着更好的修正效果.The area density map method based on three Gaussian proximity function was used to correct proximity effect respectively, and the principle of this method and steps were introduced in detail. Through com- paring correction results based on the new proximity function with the results based on the conventional proximity function, it is proved that this method is better.

关 键 词：邻近效应 邻近函数 电子束刻蚀 高斯函数 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN305