基于非辐射复合缺陷测量的GaN基LED老化性能研究  

Study on Aging Properties of GaN LEDs Based on the Measurement of Nonradiative Recombination Defect Density

作　　者：郭祖强 钱可元[1] 

机构地区：[1]清华大学深圳研究生院深圳市信息科学与技术重点实验室,广东深圳518055

出　　处：《半导体光电》2013年第6期930-934,共5页Semiconductor Optoelectronics

摘　　要：外延晶格失配等引入的非辐射复合缺陷是影响GaN基LED性能的重要因素。对不同LED样品老化1 600h前后的I-V特性、理想因子以及量子效率、发光特性进行了测量研究,并结合非辐射复合缺陷的定量测量,分析验证了非辐射复合缺陷对LED老化性能的影响。结果表明,非辐射复合缺陷是造成GaN基LED老化过程中隧穿电流增大、I-V特性偏离理想模型、理想因子增大以及光输出非线性化等现象的根本因素。在此基础上建立了非辐射复合缺陷浓度与LED老化性能之间的关系模型,提出了一种基于非辐射复合缺陷浓度及其恶化系数的GaN基LED老化性能评测方法。The nonradiative recombination defect introducd by lattice mismatching is an important factor affecting the properties of high-power GaN-based LEDs.The current-voltage characteristics,ideality factors,internal quantum efficiencies and luminescence properties of LED samples before and after 1600 hours aging tests were studied.At the same time,the effects of nonradiative recombination defect densities on LED＇s aging properties were measured.The results show that nonradiative recombination defect is the basic reason for the increase of tunneling current,deviation from ideal model of the current-voltage characteristic,increase of ideality factor and nonlinear phenomena of light-output.So based on which,the relationship model between nonradiative recombination defect density and LED＇s aging property is built,and a method for evaluation of LED＇s aging performance is proposed.

关 键 词：非辐射复合缺陷 GAN基LED 老化性能 

分 类 号：TN312.8[电子电信—物理电子学]