碱液环境下电化学腐蚀多晶硅的研究  

Study on Electrochemical Etching Polysilicon in Aalkaline Environment

作　　者：顾静琰 黄仕华[1] 

机构地区：[1]浙江师范大学材料物理系,浙江金华321004

出　　处：《半导体光电》2013年第6期1005-1008,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61076055);复旦大学应用表面物理国家重点实验室开放课题(KL2011_04)

摘　　要：主要介绍了在NaOH溶液中,利用电化学技术腐蚀制备多晶硅绒面的新方法。实验中,通过改变腐蚀液浓度、腐蚀电压、腐蚀温度等因素,制得一系列多晶硅绒面。实验结果表明,当腐蚀碱液浓度为20%,腐蚀电压为20V,腐蚀温度为25℃时,腐蚀得到的硅片表面比较均匀,在波长400～800nm范围内,测量得表面反射率最低为19%左右。Introduced is a new method for preparing polycrystalline textured surface corrosion by means of electrochemical technique in alkaline solution.A series of textured polycrystalline silicon were fabricated under different corrosive concentrations,voltages and temperatures.The results indicate that the stable and uniform textured polycrystalline silicon can be obtained under the corrosion concentration of 20%,the corrosion voltage of 20V and the temperature of 25℃.And the lowest surface reflectance of the obtained silicon is measured to be 19% in the wavelength range of 400～800nm by spectrophotometer.

关 键 词：多晶硅 制绒 电化学腐蚀 

分 类 号：TM914.4[电气工程—电力电子与电力传动]