表面活性剂对硅腐蚀效果及太阳电池性能改善研究  

Effects of Surfactant on Silicon etching and Performance Optimization of Solar Cells

作　　者：马桂艳[1] 王建明[1] 

机构地区：[1]英利绿色能源控股有限公司,河北保定071051

出　　处：《半导体光电》2013年第6期1009-1012,共4页Semiconductor Optoelectronics

摘　　要：在硝酸/氢氟酸腐蚀液中加入表面活性剂对多晶硅片进行了腐蚀,并使用扫描电子显微镜和激光共聚焦显微镜观察硅片表面形貌的变化,在此基础上分析了硅片浸润性及反应物迁移率变化对腐蚀效果的影响。实验结果表明:加入表面活性剂后,腐蚀速率降低,在硅片表面形成了更均匀的绒面结构及亚微米结构,硅片的反射率从23%下降到18.5%,反射率的降低提升了太阳电池的受光面积。仿真结果表明,使用加入表面活性剂的腐蚀液后制备的太阳电池,其短路电流提升了0.25mA/cm2,光电转换效率提升了0.1%。The influence of surfactant on multicrystalline silicon etching in HNO3/HF acid system was studied,and the silicon surface morphology was observed by SEM and confocal laser scanning microscope.On this basis,the influence of wettability and reactants＇mobility on the etching effect was investigated.Experimental results reveal that the etching rate is reduced in the surfactant etching system,and more homogenous sub-micron texturing structure is formed on the silicon surface.The reflection index reduces from 23%to 18.5%,and meanwhile,the effective light receiving area is increased,the Isc and the opto-electronic conversion efficiency are increased by 0.25mA/cm^2 and 0.1%,respectively.

关 键 词：酸制绒 表面活性剂 多晶硅片 表面形貌 

分 类 号：TM914.41[电气工程—电力电子与电力传动]