ZnO纳米晶薄膜的制备及特性分析  

Preparation and Characteristics Analysis of ZnO Nanocrystalline Film

作　　者：邓建平[1] 汪敏强[1] 宋孝辉[1] 

机构地区：[1]西安交通大学电子与信息工程学院,陕西西安710049

出　　处：《纳米科技》2013年第6期17-21,共5页

基　　金：基金项目：国家自然科学基金项目（61176056,91123019）

摘　　要：在低温下制备了粒径小于10nm的ZnO纳米晶，用旋涂法制备ZnO纳米晶薄膜，XRD分析ZnO晶相是纤锌矿结构；SEM与AFM表明，纳米晶薄膜在300％退火后薄膜的厚度明显减小到130nm，表面粗糙度降低到3．27nm，粒径明显增大；紫外-可见吸收和透射比光谱表明，随着退火温度的增加，吸收边发生了红移，吸收肩更明显，薄膜具有高的透射率（75—85％）；薄膜方阻随温度增加而增大，300℃以下退火方阻增加很小（小于8．5Ω／sq），400℃以上退火方阻大幅增加（大于21．1Ω／sq），因此，ZnO纳米晶薄膜最优退火温度点为300℃。ZnO Nanocrystallines （d〈10 nm） were prepared at low temperature,and then ZnO nanocrystalline films were prepared by spin-coating. XRD analysis confirms that the as-prepared ZnO is hexagonal wurtzite crystal structure. SEM and AFM show that with annealing at 300 ℃,the thickness of the film reduces to 130nm （nonsintered 200 nm） and the surface roughness to 3.27 nm （nonsintered 4.89 nm）, and the particle size significantly increases. UV-Visual absorption and transmission spectra show that the absorption edge has shifted to red,the absorption shoulder widen and the transparency of all films are 75-85%. With the increase of annealing temperature, the sheet resistance of the films increases from 8.5 Ω/sq at below 300 ℃ to 21.1 Ω/sq at above 400℃. Therefore,the optimal annealing temperatures （300 ℃） was proposed.

关 键 词：ZNO纳米晶 ZNO薄膜 水热法 旋涂法 

分 类 号：TM914.4[电气工程—电力电子与电力传动]