N^+离子束注入对玉米种子品质和幼苗抗性的影响  

Effect of N^+ Ion Implantation on Maize Seed Quality and Resistance

作　　者：黄洪云[1] 杜宁[1] 韩哲[1] 

机构地区：[1]唐山学院基础教学部,河北唐山063000

出　　处：《种子》2013年第12期12-15,共4页Seed

基　　金：2012年度唐山市科学技术研究与发展第二批指导计划项目(编号12120204 b)

摘　　要：能量为30 keV的N+离子束,照射剂量范围为0.5×1017ion/cm2～4.0×1017ion/cm2,且剂量等量递增,注入玉米品种辽单120,研究不同照射剂量对玉米种子品质的影响,测定形态学指标和生理生化指标变化;同时测定经抗旱PEG胁迫下,不同辐照剂量对幼苗叶片脯氨酸、MDA含量和POD、SOD酶活的影响,设定空白对照ck1、干旱胁迫对照ck2,通过实验数据得到提高种子品质和幼苗抗倒伏、抗旱的最佳剂量,并对实验结果进行深入的机理分析。Maize seeds Liaodanl20 were implanted with different dose of 30 keV energy N＋, which the doses were 0.5 × 10^17 ion/cm2 -4.0 × 10^17 ion/cm2. We studied the physiological and biochemical index of the seeds with the dose changes,we also studied the Proline,MDA content and the activity of the POD ,SOD of Seedling leaves under PEG simulation drought. The experiments set the blank control ckI and drought resistance ck2. The experimental results showed that the best treating dose was 3.5 × 10^17ion/cm2.

关 键 词：玉米 生物学指标 种子品质 抗性 机理分析 

分 类 号：S513[农业科学—作物学]