GaN功率开关器件的发展与微尺度功率变换  

Development of the GaN Power Switch Device and Microscale Power Conversion

作　　者：赵正平[1] 

机构地区：[1]中国电子科技集团公司,北京100846

出　　处：《半导体技术》2014年第1期1-6,13,共7页Semiconductor Technology

摘　　要：GaN材料具有高的击穿场强、高的载流子饱和速度和能形成高迁移率、高密度的二维电子气,使得GaN功率开关器件具有关断电压高、导通电阻小、工作频率高等特点。GaN功率开关器件将成为高效率与超高频(UHF)电力电子学发展的重要基础之一。综述了GaN功率开关器件的发展历程、现状、关键技术突破、应用研究和微功率变换集成。重点评估了常开和常关两类GaN功率开关器件的异质结外延材料的结构、器件结构优化、器件的关键工艺、增强型器件的形成技术、器件性能、可靠性、应用特点和微系统集成。最后总结了新世纪以来GaN新一代电力电子器件技术进步的亮点。The GaN material has higher breakdown voltage, higher carrier saturation speed higher two-dimensional electronic gas density with have the high blocking voltage, small on-resistanc devices will become one of the important basis for mobility. It makes the GaN power switch device igh working frequency, etc. GaN power switching development of efficient and ultra high frequency （UHF） power electronics. The development course, present situation, key technology breakthrough, applied research and micropower transform integration of the GaN power switch device are reviewed. The two classes of normally-on and normally-off GaN power switching device are evaluated. The evaluations of the device key are heterostructure epitaxial material structure, the optimization of device structure, the key device process, the formation technology of enhancement-mode device, the device performance, re- liability, application features and microsystem integration. Finally, the technology progress highlights of GaN a new generation of power electronic device in the new century are summarized.

关 键 词：常开GaN功率开关器件 常关GaN功率开关器件 GAN高电子迁移率晶体管 (HEMT) GaN异质结场效应晶体管(HFET) 增强型器件 功率变换 

分 类 号：TN323[电子电信—物理电子学]