硅基GaN超级结器件研究  

Investigation About Novel Superjunction Gallium Nitride Device Based on the Silicon Substrate

作　　者：于宗光[1] 黄伟[1] 李海鸥[1,2] 

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]桂林电子科技大学信息与通信工程学院,广西桂林541004

出　　处：《半导体技术》2014年第1期51-55,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61274077);江苏省333工程科研资助项目(BRA2011115)

摘　　要：提出采用硅基F-离子处理技术研制硅基GaN超级结高压器件,并建立了三维电荷器件模型。实验结果表明,当栅极电压偏置于-1.25^-0.25 V时,漂移区长度为10μm的新器件其峰值跨导g m(max)出现最大值约为390 mS/mm,且较为平缓。该器件导通电阻较低,比导通电阻为0.562 5 mΩ·cm2,仅为相同漂移区长度的常规增强型GaN高压器件比导通电阻率2.25 mΩ·cm2的25%。该器件击穿特性与漂移区长度呈较好的线性关系,并在漂移区长度为15μm时,击穿电压接近硅基GaN高压器件的理想击穿电压,约为657 V,比前者器件结构的击穿电压提高了约182 V。The novel superjunction GaN devices based on the silicon substrate was proposed by the F- ion plasma treatment technology. The 3D charge device model was established and modulated by be- tween formed horizontal p/n pillar and vertical GaN epilayer/Si substrate to effectively reduce the surface electrical field under the gate edge and several key parameters of p-type pillar formed by F- ion can be qualified. The experimental results show that the gm（max）Of the device with the drift region LGD of 10 μm is smooth and about 390 mS/mm at the VGs range from -1. 25 V to -0.25 V. The specific on-resistance is about 0. 562 5 mΩ· cm2, of which is 25% for the conventional enhancement mode GaN power device with the same drift region. Comparison with the conventional GaN device, the breakdown voltage charac- teristic and the drift region length of the superjunction GaN device is almost in the linear relationship and approaches to the intrinsic breakdown voltage （when the drift region is 15μm） with the increase of the drift region and the breakdown voltage is about 657 V, which is 182 V higher than that of the formed de- vice.

关 键 词：宽禁带半导体 氮化镓异质结 超级结 F-离子处理技术 比导通电阻 

分 类 号：TN304.23[电子电信—物理电子学]