硅中微量硼元素的区熔掺杂  

Trace Boron-Doping of Silicon with FZ Method

作　　者：闫萍[1] 庞炳远[1] 索开南[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2014年第1期60-63,共4页Semiconductor Technology

摘　　要：以高纯B2O2的水溶液为掺杂剂，采用将掺杂剂逐点滴涂在硅棒表面后再进行区熔的方式，实现了硅材料的微量硼掺杂，研制出了导电类型为P型、电阻率为3000～5000Ω·cm的区熔用硅多晶。实验表明，区熔掺杂完成后附加的一次真空区熔过程，使杂质在多晶硅中的分布变得更加均匀。在确定的工艺条件下，由于掺杂前及掺杂后多晶硅轴向电阻率的一致性、实验用多晶硅样本的大小、所需掺杂剂剂量的多少等因素均会影响掺杂的准确性，因此需要在相同条件下进行多次实验，通过积累大量的实验数据以实现准确掺杂。Using high purity B2O3 aqueous solution as the dopant, adopting the methods of point- dripping the dopant on the surface of silicon rods before zone melting, implementing the trace boron- doped silicon material. Polycrystalline silicon was developed which has a conduction type of p-type and a resistivity of 3 000-5 000 Ω· cm and can be used for zone-melting. Experimental results show that an additional vacuum zone-melting process after the completion of doping zone melting, can improve the uniformity of impurity distribution in polycrystal. Under certain process conditions, many factors may influence the accuracy of doping, such as the consistency of the axial resistivity in polycrystalline before and after doping, the sample size of the experimental polycrystalline, and the dosage of dopant required, etc. Therefore, repeating experiments under the same doping condition are required. Through the accumulation of large numbers of experimental data, accurate doping would be realized.

关 键 词：区熔(FZ) 掺硼 硅 高电阻率 高纯度 

分 类 号：TN304.12[电子电信—物理电子学] TN305.3