SiC纳米线的制备及其发光性能的研究  

Synthesis and Photoluminescence Property of SiC Nanowires

作　　者：张恩磊[1] 王国胜[1] 张本贵[1] 王祝敏[1] 张翔[1] 

机构地区：[1]沈阳化工大学化学工程学院,辽宁沈阳110142

出　　处：《铜业工程》2013年第6期1-3,14,共4页Copper Engineering

基　　金：辽宁省教育厅一般项目资助(L2013163)

摘　　要：采用热蒸发法,以SiO与活性碳混合粉末为原料在1400℃的条件下制备出SiC纳米线。通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能谱仪(EDS)及X-射线衍射分析(XRD)等手段对制备的SiC纳米线进行了表征及生长机理分析。研究表明:SiC纳米线表面光滑、平直,沿[111]方向生长,直径为30～60nm,长约数十微米,内部为约数十纳米的SiC晶体层外部约为2nm的SiO2层的异质机构。SiO作为硅源时的SiC纳米线产量高于其他硅源。最后通过光致发光(PL)光谱研究了SiC纳米线的PL特性。A large scale β -SiC nanowires were synthesized by heating SiO and activated carbon powders without metal catalysts at 1400℃. The SiC nanowires were characterized by scanning electron microscopy （SEM） , transmission electron microscopy （TEM）, and energy dispersive spectroscopy （ EDS ） and X - ray diffraction （ XRD ）. The results demonstrate that the SiC nanowires were smoothness with width 10 -60nm and length about several ten micrometer and preferentially orientated along the [ 111 ] direction. The structures of SiC nanowires were crystal SiC in the middle, and amorphous silicon dioxide outer layer of about 2nm, and it is SiC/SiO2 heterostructure. SiO is the ideal silicon source. The yield of SiC nanowires is much more than others. The SiC nanowires exhibit the strong photoluminescence peaks at wavelength 400 nm, which is significantly shifted to the blue compared with the reported lumines- cence results of SiC materials.

关 键 词：SIC 纳米线 热蒸发 异质结构 光致发光 

分 类 号：TB383[一般工业技术—材料科学与工程]