SiO_x薄膜微结构的正电子谱学研究  

Research into Positron Annihilation of the Microstructure of SiO_x Thin Films

作　　者：马敏阳[1] 段宇[1] 

机构地区：[1]南京工程学院能源与动力工程学院,江苏南京211167

出　　处：《南京工程学院学报（自然科学版）》2013年第3期28-31,共4页Journal of Nanjing Institute of Technology(Natural Science Edition)

基　　金：南京工程学院校级科研基金项目(QKJB2011006)

摘　　要：实验中选择Si（N型，（100面），3～5Ω·cm）作为薄膜样品的基底，利用射频溅射方法制备低介电常数非晶SiOx（x〈2）薄膜，并通过真空退火来改变其缺陷态．正电子湮没多普勒展宽能谱（DBS）测量在慢正电子束流装置上进行．正电子湮没结果显示随退火温度增加，SiOx薄膜中有纳米晶硅生成，使正电子的捕获缺陷减少，从而使S参数呈下降趋势．Si （ 100, 3 -5 Ω· cm） is chosen as the substrate of thin film samples in the tests. RF magnetron sputtenng method is used to prepare low dielectric constant amorphous pore SiOx thin fihns, the surface defect states of which are changed by using vacuum annealed. The positron annihilation Doppler broadening spectrum is measured on positron beam device. The results of positron annihilation show that as the temperature of photohu silicon is generated in SiOx thin films, which reduce the capture defects of positron towards decline. increases, nano-crytalline Thus, S parameters show a tendency

关 键 词：SIOX薄膜 射频磁控溅射 退火 正电子湮没 慢正电子束流 多普勒展宽谱 S参数 

分 类 号：TN304.23[电子电信—物理电子学]