CIGS双梯度带隙吸收层的制备及特性  

Preparation and characterization of the CIGS thin films with double-graded band gap

作　　者：李强[1] 康振锋 刘文德[1] 郑平平[1] 肖玲玲[1] 范悦[1] 薄青瑞 齐彬彬[1] 丁铁柱[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙古自治区半导体光伏技术重点实验室,内蒙古呼和浩特010021

出　　处：《真空》2014年第1期48-52,共5页Vacuum

基　　金：国家自然科学基金项目(批准号:11264025);内蒙古自治区重大基础研究开放课题(批准号20130902)

摘　　要：采用脉冲激光沉积(PLD)方法,在钠钙玻璃上沉积不同Ga含量的CuIn(1-x)Gax Se2薄膜,研究不同Ga含量对CIGS薄膜结构及光学特性的影响。研究表明:随着Ga含量增加,CIGS薄膜的光学带隙增大。优选特性较好的CIGS沉积在同一个钠钙玻璃衬底上,使Ga/(In+Ga)比在薄膜内纵深方向呈先减小后增加的变化。采用XPS逐层刻蚀分析薄膜的元素组成,利用带隙近似公式得到能带随深度变化情况,最终得到结构、光学特性和电学特性较好的双梯度带隙结构薄膜。The Culn o_x）Ga,Se2 thin films with different Ga contents were deposited on the soda lime glass by pulsed laser deposition method. The influence of different Ga contents on the films structure and optical properties were studied. The results show that： the optical band gap of the CIGS thin films increase with increasing the Ga contents.Then the CIGS films with good characteristics were sequentially deposited on the same soda lime glass. The elements of thin film were studied with XPS etching layer-by-layer, and the variation of band gap in the depth direction was calculated by the band gap approximate formula. Finally,double-graded band gap thin films with good structure, optical and electrical characteristics were obtained.

关 键 词：脉冲激光沉积 CuIn(1-x)Ga^Se2 XPS逐层刻蚀 双梯度带隙 

分 类 号：O484[理学—固体物理]