新型的CMOS分布放大器的设计  

Design of a novel CMOS distributed amplifier

作　　者：刘畅[1] 

机构地区：[1]黄冈师范学院物理与电子信息学院,湖北黄冈438000

出　　处：《黄冈师范学院学报》2013年第6期56-59,共4页Journal of Huanggang Normal University

摘　　要：利用0.6微米CMOS技术设计了一种新型的CMOS分布放大器。介绍了分布放大器的原理。利用HP-ADS软件仿真和设计了一个四级CMOS分布放大器。设计中使用了一系列片上螺旋电感。测量了分布放大器的S参数。对实验结果进行了分析和讨论。A novel distributed amplifier is designed using 0.6 μm CMOS technology. The principle of distributed amplifier is demonstrated. A four--stage CMOS distributed amplifier is simulated and designed by HP--ADS. A series of on--chip spiral inductors are used in the design. S parameters of the distributed amplifier are measured. The experimental results are studied.

关 键 词：分布放大器 CMOS 螺旋电感 S参数 

分 类 号：TN722[电子电信—电路与系统]