SiC固定模拟放射性石墨的研究  

Study of SiC Simulating Immoblization of Radioactive Graphite

作　　者：赵岭岭[1] 滕元成[1] 刘兵[1] 任雪潭[1] 易勇[1] 王山林[1] 

机构地区：[1]西南科技大学四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,绵阳621010

出　　处：《中国陶瓷》2014年第1期13-17,共5页China Ceramics

基　　金：国家自然科学基金(10775113)

摘　　要：用12C模拟放射性同位素14C,利用物理化学性能优异的SiC固定石墨。以硅粉和石墨粉为原料,采用固相反应法合成SiC,借助X射线衍射(XRD)、扫描电镜(SEM)、能谱(EDS)等分析手段,研究温度、球磨时间、保温时间等因素对SiC合成的影响。结果表明,硅和石墨直接合成SiC的反应为扩散控制的固相反应,开始反应温度在1230℃以下,较佳合成温度为1330℃;在1300℃合成SiC,球磨对SiC的合成有一定的促进作用;在1270℃以下合成SiC,无气氛保护球磨不利于SiC的合成,煅烧温度越低,负面影响越大;合成SiC的较佳保温时间为1 h。12C was applied to simulate radioactive isotope 12C, which used excellent physical and chemical properties of SiC to immobilize graphite. With silicon and graphite powder as raw material which synthesized SiC by solid- phase reaction, we studied the temperature, milling time, holding time and other factors on the synthesis of SiC and analyzed with X-ray diffraction （XRD）, scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS） and other analytical tools. The results show that silicon and graphite direct synthesis of SiC is diffusion-controlled solid- phase reaction, the reaction temperature started below 1230℃ ,and the synthesis temperature is preferably 1330 ℃ , synthesis SiC at 1300 ℃ , milling play a positive role in the process, synthesis SiC below the 1270℃ , no protective atmosphere milling is not conducive to the synthesis of SiC, the lower calcinations temperature is, the greater the negative impact is, the preferred holding time of synthesis SiC is 1 h.

关 键 词：SIC 硅 石墨 合成 

分 类 号：TQ127.12[化学工程—无机化工]