GaAs晶片表面的光辐射清洁及红外测温  

LIGHT IRRADIATION CLEANING OF GaAs SURFACE AND ITS TEMPERATURE MEASUREMENT BY IR RADIATION

作　　者：杨滨[1] 侯洵[1] 张济康[1] 郭里辉[1] 张功力 

机构地区：[1]中国科学院西安光学精密机械研究所,710068

出　　处：《高速摄影与光子学》1991年第2期167-171,共5页

摘　　要：本文介绍了在超高真空系统中对GaAs晶片进行光辐射清洁。这个实验是在实际研制的象增强器第三代管转移铟封系统上完成的,已具有实用价值。用这套清洁方法所制作的反射式GaAs光阴极积分灵敏度已达750μA/lm。The surface of p+ - GaAs layer being thermally cleaned by white- light irradia-tion is introduced in this paper. The cleaning method is practically used in our photocathode-transfer vacuum system and the achieved sensitivity of reflective mode GaAs photocathode which is cleaned by the method is up to 750 μA/lm.

关 键 词：GAAS 光电阴极 光辐射 测温 清洁 

分 类 号：TN144.054[电子电信—物理电子学]