应用半导体激光器缩比仿真微波着陆系统辐射源研究  

Using Semiconductor Laser Scaling Models as Radiation Source in Simulation of Microwave Landing System

作　　者：何晶[1] 吴德伟[1] 蒙文[1] 苗强[1] 

机构地区：[1]空军工程大学信息与导航学院,西安710077

出　　处：《电光与控制》2014年第2期17-21,35,共6页Electronics Optics & Control

基　　金：国家自然科学基金(61104056)

摘　　要：针对微波着陆系统仿真试验的辐射源模型选用问题,提出以大的缩比系数将半导体激光器作为微波系统辐射源缩比仿真模型,研究了微波系统和半导体激光器辐射信号的物理相似性,分析了二者的辐射强度、频谱特性、信号场型以及极化方式等主要相似性能,并采用三菱激光器进行了微波着陆系统辐射源缩比模型的仿真实验,实现了对微波着陆系统工作过程的模拟,验证了运用半导体激光器缩比仿真微波电磁系统辐射源的可行性,为在实验室以较小的空间缩比仿真大型电磁系统性能提供了新的方法手段,同时也丰富了电磁缩比仿真理论。It is difficult to choose or produce an appropriate radiation source for electromagnetic environment simulation of Microwave Landing System （ MLS ） .We proposed to use a semiconductor laser with a big scale factor as the simulation model microwave radiation source .The physical similarities between the microwave and the radiation signal of semiconductor laser,such as the radiation intensity,spectrum characteristics,radiation field and polarization mode etc,were analyzed.A semiconductor laser was used for simulation of MLS radiation source scale model,and simulation of MLS operating process was realized .The result shows the feasibility of this method,which provides a new means for studying large electromagnetic system using small scale model simulation in laboratory.

关 键 词：半导体激光器 微波着陆系统 辐射源 缩比仿真 

分 类 号：V271.4[航空宇航科学与技术—飞行器设计]