氢氦共同稀释对微晶硅锗薄膜结构特性的影响  

Influence of Helium and Hydrogen Mixture Dilution on the Structural Properties of Microcrystalline Silicon-germanium Films

作　　者：李天微[1] 张建军[1] 曹宇[1] 倪牮[1] 黄振华[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电信息科学技术教育部重点实验室,光电子薄膜器件与技术天津市重点实验室,天津300071

出　　处：《人工晶体学报》2013年第12期2525-2531,共7页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973计划)(2011CBA00705;2011CBA00706;2011CBA00707);国家自然科学基金(61377031);天津市应用基础及前沿技术研究计划(12JCQNJC01000);中央高校基本科研业务费专项资金资助;天津市重大科技支撑计划项目(11TXSYGX22100)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在200℃的衬底温度下,以SiH4和GeH4为反应气体,H2和He为稀释气体,制备微晶硅锗(μc-Si1-x Ge x∶H)薄膜。结合Raman,XRF,FTIR,AFM等测试,我们分析了不同流量He的掺入对高锗含量(Ge含量～40%)μc-Si1-x Ge x∶H薄膜结构性能和光电特性的影响。结果表明,随着He稀释/H2稀释(C He/H2=He/H2)的增加,薄膜的Ge含量基本保持不变,H含量减少,致密度提高,Ge悬挂键和微结构因子先减少后增大。C He/H2=36%时,薄膜光电特性最好。Hydrogenated microcrystalline silicon-germanium films（ μc-Si1-xGex： H） were prepared by radio frequency plasma-enhanced chemical vapor deposition（RF-PECVD） using S1H4-GeH4 gas mixture at the growth temperature of 200 ℃. The effect of helium and hydrogen dilution on the film photoelectric and structural properties of μc-Si1-xGex： H were studied. As the He flow rate increasing, the H contents of the films decreased while Ge contents keep constant. The FFIR, XRD, AFM and photo/dark conductivity measurements together indicated that high quality μc-Si1-xGex： H thin film with dense micro-structure, low defect states density and optimum optoelectronic property is achieved with a helium and hydrogen dilution ratio of 36%. The possible effects of helium dilution on the growth process and properties of μc-Si1-xGex：H thin film were discussed. Key words： microcrystalline silicon-germanium film ; PECVD ; helium dilution

关 键 词：微晶硅锗薄膜 等离子体增强化学气相沉积 He稀释 

分 类 号：O484[理学—固体物理]