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作 者:赵志明[1] 张晓静[1] 马二云[1] 白力静[1] 张国君[1] 游才印[1] 蒋百灵[1]
机构地区:[1]西安理工大学,陕西西安710048
出 处:《稀有金属材料与工程》2014年第1期145-149,共5页Rare Metal Materials and Engineering
基 金:陕西省自然科学基金(2010JQ6008);陕西省科学研究计划(21080209JK608);陕西省重点学科建设专项资金资助项目
摘 要:利用对靶磁控溅射交替沉积技术在不同Co靶电流下沉积Co/AZO纳米复合薄膜,并对其进行真空退火。研究了Co靶电流对薄膜的结构及光学性能的影响。结果表明,沉积态薄膜晶化程度随Co靶电流增加而降低,未发现Co的相关衍射峰;真空退火后,薄膜结晶性明显改善,0.3 A薄膜中出现了Co纳米颗粒,当Co靶电流增大到0.5 A时还发现了CoO纳米颗粒。UV-Vis光谱显示薄膜透过率随Co靶电流增加而降低,退火后透过率明显提高;光谱中还出现了高自旋态Co2+(d7)电子跃迁的3个特征吸收峰,0.2 A薄膜中尤其显著。Co/AZO nanocomposite films were deposited by magnetron sputtering technique in alternating deposition (AD) method under different Co target currents. The influences of Co target current on the structure and optical properties of the films were studied. XRD and TEM results show that the crystallization of the as-grown films reduces with the increasing of Co target current, and no Co diffraction peaks are observed. Crystallization is significantly improved a^er annealing, while CoO nanoparticals are found in the annealed films under Co target current of 0.5 A as well as Co nanoparticals in 0.3 A films. UV-Vis results indicate that transmittance declines with the increase of Co target current, but notably increases after annealing. Three characteristic absorption peaks corresponding to the electronic transition of high spin states Co2+ (d7) also appear in the UV-Vis spectra, particularly in 0.2 A films.
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