放电等离子烧结对Ba_8Si_(30)Ga_(16)晶体结构和热电性能的影响  

Effect of Spark Plasma Sintering on the Crystal Structure and Thermoelectric Properties of Ba_8Si_(30)Ga_(16)

作　　者：栗峰[1] 刘丽华[1] 邱红梅[1] 曹国辉[2] 李阳[1,3] 

机构地区：[1]北京科技大学数理学院,北京100083 [2]北京科技大学材料科学与工程学院,北京100083 [3]波多黎各大学工程科学与材料系,波多黎各006819044

出　　处：《材料导报》2013年第24期12-17,共6页Materials Reports

基　　金：国家自然科学基金(51072023)

摘　　要：采用电弧炉熔炼、球磨结合放电等离子烧结(SPS)的方法合成了系列第I类笼状化合物Ba8Si30Ga16,研究了样品的晶体结构和热电性能随SPS烧结温度的变化规律。研究结果表明,随着SPS烧结温度由800℃升高到1000℃,Ba8Si30Ga16样品的晶格常数由10.5435(4)减小到10.5274(2),Ba8Si30Ga16笼上Ga含量的降低可能是导致晶格常数减小的主要原因。样品的Seebeck系数、电导率、热导率、热电优值ZT均受SPS烧结温度的影响。其中,800℃SPS烧结样品的ZT值最大,这与其较低的热导率有关。Series of type I clathrate BasSi30Gai6 samples were prepared by combining arc melting, ball milling and spark plasma sintering （SPS） methods, the crystal structures and thermoelectric properties of the BasSi30 Ga16 samples with SPS sintering temperature changing were studied. The results showed that, lattice constant of Ba8 Si30- Ga16 samples gradually decreased from 10. 5435 （4）A to 10. 5274 （2）A with the SPS sintering temperature rised from 800 ~C to 1000 ~C. The decrease of Ga contents on the cage framework may be responsible for the decrease of lattice constant. Seebeck coefficient, electrical conductivity, thermal conductivity and ZT values of the samples were also af- fected by SPS sintering temperature. Sample sintered at 800 ~C got the maximum ZT values which were attributed to its lower thermal conductivity.

关 键 词：第1类笼状化合物晶格常数热电性能 

分 类 号：O472.7[理学—半导体物理]