超声喷雾热解法制备ZnO:Al薄膜及其光电性能研究  

Study on Preparation of ZnO:Al Thin Films Deposited by Ultrasonic Spray Pyrolysis Method and Its Photoelectric Property

作　　者：杨玲[1] 韦帅[1] 张婷婷[1] 许积文[1] 王华[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,桂林541004

出　　处：《材料导报》2013年第24期30-33,共4页Materials Reports

基　　金：广西信息材料重点实验室研究基金(桂科能0710908-05-Z)

摘　　要：摘要以乙酰丙酮锌、乙酰丙酮铝为锌和铝的原料，乙醇和水为溶剂，采用超声喷雾热解法在玻璃衬底上制备了Zn0：Al透明导电薄膜，研究了Al添加量为O％～20％（原子分数，下同）对ZnO：Al薄膜光电性能的影响。使用XRD、SEM、DSC、FTIR、四探针、分光光度计对薄膜进行了表征和分析。结果表明，300℃的低温能生长出结晶态的薄膜，AI掺杂引起晶格常数减小；晶粒形貌为片状；随着AI添加量的增加，方块电阻先降低后增大，Al添加量为4．0％时具有最低的方块电阻（4．43kΩ／sq），最佳的电阻率（O．43Ω·cm）；Al添加量对薄膜的透光率影响较小，平均可见光透光率大于80％。真空热处理可显著降低方块电阻，A1添加量为4．O％的薄膜经过550℃热处理后，其方块由．阻降低到106n／sa．相应的巾．阻率为1.0X10-2Ω·cm．Zn（acac）2 and Al（acac）a were used as sources of zinc and aluminum, and ethanol and water acted as solvent. The ZnO ： A1 thin films were deposited on glass substrates by ultrasonic spray pyrolysis. The effect of alumi- num doping level （0%-20%） on optical and electrical properties of ZnO ： Al thin films were studied. The ZnO ： Al thin films were characterized by XRD, SEM, DSC, FTIR, fore-point probe and UV-Vis spectrophotometer. The re- sults show that polycrystalline ZnO ： Al thin films can be grown at low temperature of 300 °C. The lattice constant decreases because of the aluminum doping. The shape of grain is flake-like. With increasing doping level, the sheet re- sistance decreases first and then increases. The smallest sheet resistance of 4. 43 kΩ/sq and the optimal resistivity of 0. 43 Ω· cm are obtained at doping level of 4. 0%. The aluminum doping has a little influence on the visible transmit- tance, and the average visible transmittance exceeds 80%. Vacuum annealing can significantly reduce the sheet resis- tance, and the optimal sheet resistance of 106 Ω/sq （resistivity of 1. OX10-2Ω） · cm） can be achieved at doping level of 4.0% and annealing temperature of 550 ~C.

关 键 词：喷雾热解法 ZNO Al 方块电阻透光率 

分 类 号：O484.1[理学—固体物理]