ZnSe衬底表面亚波长增透结构的设计及误差分析  

Design and Error Analysis of Sub-Wavelength Antireflective Micro-Structure on Surface of ZnSe Substrate

作　　者：尚鹏[1,2] 熊胜明[1] 

机构地区：[1]中国科学院光电技术研究所,四川成都610209 [2]中国科学院大学,北京100049

出　　处：《中国激光》2014年第1期251-256,共6页Chinese Journal of Lasers

摘　　要：以矢量严格耦合波（RCWA）理论为基础，通过遗传算法优化设计了圆柱形ZnSe亚波长微增透结构，获得了具有较好增透效果的结构参数；重点讨论分析了实际加工过程中圆柱形方向偏差及整体面形轮廓偏差对抗反射特性的影响；还对多台阶ZeSe增透性能随高度的变化进行了分析。结果表明：当圆柱形微结构周期为3.3 μm,高度为1.7517 μm,占空比为0.7566时,在8~14 μm波段范围具有较好的整体增透效果；占空比偏差，高度偏差及圆柱体面形轮廓偏差对结构的平均透射性能都具有较大的影响；圆锥形ZnSe微结构的透射性能随着高度和划分层数的增加呈现一定的规律分布，且相比圆柱形最优微结构,平均透射性能有了较大幅度的提高。Based on the rigorous couple-wave analysis （RCWA） method, columned ZnSe sub-wavelength micro-structure by genetic algorithm （GA） is optimized and optimum structure parameters are obtained. The effect of structure parameter error and profile shape error of columned ZnSe structure on the anti-reflective properties in actual manufacturing process is discussed. The transmittance of the multilevel ZnSe gratings with coned profile is also presented as a function of the structure height. The results show that the columned ZnSe micro-structure can have excellent average anti-reflective properties between 8 μm and 14 μm at normal incidence when the structure period, height and filling factor are 3.3 μm, 1.7517 μm and 0.7566, respectively. The errors of filling factor, height and profile shape have a big influence on the average transmittance. The transmittance of the ZnSe microstructure with coned profile shows some regular distribution with the increase of structure height and the number of divided layers, and it has a great improvement as compared with the optimized columned ZnSe micro-structure.

关 键 词：衍射 增透结构 耦合波理论 ZNSE 亚波长 

分 类 号：TN201[电子电信—物理电子学]