High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy  

作　　者：邢军亮 张宇 徐应强 王国伟 王娟 向伟 倪海桥 任正伟 贺振宏 牛智川 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第1期454-457,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2013CB932904,2012CB932701,2011CB922201,and 2010CB327600);the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005);the National Natural Science Foundation of China(Grant Nos.61274013,U1037602,and 61290303)

摘　　要：The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well （QW） laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well （MQW） grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence （PL） property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well （QW） laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well （MQW） grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence （PL） property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.

关 键 词：GASB multiple-quantum well photoluminescence 

分 类 号：TN304.054[电子电信—物理电子学]