GaN PIN betavoltaic nuclear batteries  

作　　者：LI FengHua GAO Xu YUAN YuanLin YUAN JinShe LU Min 

机构地区：[1]Optical Engineering Key Laboratory, Chongqing Normal University [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

出　　处：《Science China(Technological Sciences)》2014年第1期25-28,共4页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.10875084);the Natural Science Foundation of Jiangsu Province(Grant No.BK2008174);the Applied Science Foundation of Suzhou(Grant No.SYJG0915);the National Basic Research Program of China(Grant No.G2009CB929300);supported by Department of Nuclear Science and Engineering,Nanjing University of Aeronautics and Astronautics

摘　　要：GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.

关 键 词：GAN PIN nuclear battery betavoltaic 

分 类 号：TM918[电气工程—电力电子与电力传动]